Photomechanical and Thermal Wave Responses of a Two-Temperature Semiconductor Model with Moisture Diffusivity Process

Document Type : Original Article

Authors

1 mathematics,sicence ,zagzig

2 Department of Mathematics, Faculty of Science, Zagazig University, Zagazig 44519, Egypt

3 mathematics department, faculty of sciences, zagazig univeristy

Abstract

Abstract.
In the context of the two-temperature thermoelasticity theory, a novel mathematical-physical model is introduced that describes the influence of moisture diffusivity in the semiconductor material. The Two-dimensional (2D) Cartesian coordinate is used to study the coupled between the thermo-elastic, plasma waves, and Moisture Diffusivity. Dimensionless quantities are the main physical fields in the Laplace transform domain. For the unknown variables, some conditions are applied at the free surface of the medium according to two temperature theory, to get the main quantities analytically. The Laplace transform technique has been applied with some numerical approximations in the time domain to obtain the exact expressions of the main physical fields. Due to the effects of the two temperature parameter, numerical results of silicon material have been introduced. The impacts of thermoelectric, thermoelastic, and reference moisture parameters have been discussed graphically
Keywords: Photothermal theory; Two temperature; moisture diffusivity; Thermoelasticity; Harmonic Wave; reference moisture.

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